stp60ne06l-16 STP60NE06L-16FP n - channel 60v - 0.014 w - 60a to-220/to-220fp stripfet ? power mosfet n typical r ds(on) = 0.014 w n avalanche rugged technology n low gate charge n high current capability n 175 o c operating temperature n low threshold drive description this power mosfet is the latest development of stmicroelectronis unique "single feature size ? " strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka- ble manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n dc-dc & dc-ac converters n automotive environment ? internal schematic diagram absolute maximum ratings symbol parameter value unit stp60ne06l-16 STP60NE06L-16FP v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k w )60v v gs gate-source voltage 15 v i d drain current (continuous) at t c = 25 o c60 35a i d drain current (continuous) at t c = 100 o c42 24a i dm ( ) drain current (pulsed) 240 140 a p tot total dissipation at t c = 25 o c 150 45 w derating factor 1 0.3 w/ o c v iso insulation withstand voltage (dc) ? 2000 v dv/dt peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 60 a, di/dt 300 a/ m s, v dd v (br)dss , t j t jmax type v dss r ds(on) i d stp60ne06l-16 STP60NE06L-16FP 60 v 60 v < 0.016 w < 0.016 w 60 a 35 a may 2000 to-220 to-220fp 1 2 3 1 2 3 1/9
thermal data to-220 to-220fp r thj-case thermal resistance junction-case max 0.94 2.7 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 60 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25v) 400 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 15 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1 1.6 2.5 v r ds(on) static drain-source on resistance v gs = 5v i d = 30 a v gs = 10v i d = 30 a 0.014 0.012 0.016 0.014 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 60 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d =30 a 30 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 4150 590 150 pf pf pf stp60ne06l-16/fp 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v i d = 30 a r g = 4.7 w v gs = 5 v (resistive load, see fig. 3) 50 155 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 40 v i d = 60 a v gs = 5 v 55 15 30 70 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 30 v i d = 30 a r g =4.7 w v gs = 5 v (resistive load, see fig. 3) 125 25 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 48 v i d = 20 a r g = 4.7 w v gs = 5 v (inductive load, see fig. 5) 45 220 280 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 60 240 a a v sd ( * ) forward on voltage i sd = 60 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c (see test circuit, fig. 5) 85 300 7 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for to-220 safe operating area for to-220fp stp60ne06l-16/fp 3/9
thermal impedance for to-220 output characteristics transconductance thermal impedance forto-220fp transfer characteristics static drain-source on resistance stp60ne06l-16/fp 4/9
gate charge vs gate-source voltage normalized gate threshold voltage vs temperature source-drain diode forward characteristics capacitance variations normalized on resistance vs temperature stp60ne06l-16/fp 5/9
fig. 1 : unclamped inductive load test circuit fig. 3 : switching times test circuits for resistive load fig. 2 : unclamped inductive waveform fig. 4 : gate charge test circuit fig. 5 : test circuit for inductive load switching and diode recovery times stp60ne06l-16/fp 6/9
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c stp60ne06l-16/fp 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data stp60ne06l-16/fp 8/9
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